diff options
Diffstat (limited to 'arch/arm/mach-exynos/dmc_init_ddr3.c')
| -rw-r--r-- | arch/arm/mach-exynos/dmc_init_ddr3.c | 866 |
1 files changed, 866 insertions, 0 deletions
diff --git a/arch/arm/mach-exynos/dmc_init_ddr3.c b/arch/arm/mach-exynos/dmc_init_ddr3.c new file mode 100644 index 0000000000..7c0b12ae51 --- /dev/null +++ b/arch/arm/mach-exynos/dmc_init_ddr3.c @@ -0,0 +1,866 @@ +/* + * DDR3 mem setup file for board based on EXYNOS5 + * + * Copyright (C) 2012 Samsung Electronics + * + * SPDX-License-Identifier: GPL-2.0+ + */ + +#include <common.h> +#include <config.h> +#include <asm/io.h> +#include <asm/arch/clock.h> +#include <asm/arch/cpu.h> +#include <asm/arch/dmc.h> +#include <asm/arch/power.h> +#include "common_setup.h" +#include "exynos5_setup.h" +#include "clock_init.h" + +#define TIMEOUT_US 10000 +#define NUM_BYTE_LANES 4 +#define DEFAULT_DQS 8 +#define DEFAULT_DQS_X4 (DEFAULT_DQS << 24) || (DEFAULT_DQS << 16) \ + || (DEFAULT_DQS << 8) || (DEFAULT_DQS << 0) + +#ifdef CONFIG_EXYNOS5250 +static void reset_phy_ctrl(void) +{ + struct exynos5_clock *clk = + (struct exynos5_clock *)samsung_get_base_clock(); + + writel(DDR3PHY_CTRL_PHY_RESET_OFF, &clk->lpddr3phy_ctrl); + writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl); +} + +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) +{ + unsigned int val; + struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl; + struct exynos5_dmc *dmc; + int i; + + phy0_ctrl = (struct exynos5_phy_control *)samsung_get_base_dmc_phy(); + phy1_ctrl = (struct exynos5_phy_control *)(samsung_get_base_dmc_phy() + + DMC_OFFSET); + dmc = (struct exynos5_dmc *)samsung_get_base_dmc_ctrl(); + + if (reset) + reset_phy_ctrl(); + + /* Set Impedance Output Driver */ + val = (mem->impedance << CA_CK_DRVR_DS_OFFSET) | + (mem->impedance << CA_CKE_DRVR_DS_OFFSET) | + (mem->impedance << CA_CS_DRVR_DS_OFFSET) | + (mem->impedance << CA_ADR_DRVR_DS_OFFSET); + writel(val, &phy0_ctrl->phy_con39); + writel(val, &phy1_ctrl->phy_con39); + + /* Set Read Latency and Burst Length for PHY0 and PHY1 */ + val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) | + (mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT); + writel(val, &phy0_ctrl->phy_con42); + writel(val, &phy1_ctrl->phy_con42); + + /* ZQ Calibration */ + if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16, + &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17)) + return SETUP_ERR_ZQ_CALIBRATION_FAILURE; + + /* DQ Signal */ + writel(mem->phy0_pulld_dqs, &phy0_ctrl->phy_con14); + writel(mem->phy1_pulld_dqs, &phy1_ctrl->phy_con14); + + writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT) + | (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT), + &dmc->concontrol); + + update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3); + + /* DQS Signal */ + writel(mem->phy0_dqs, &phy0_ctrl->phy_con4); + writel(mem->phy1_dqs, &phy1_ctrl->phy_con4); + + writel(mem->phy0_dq, &phy0_ctrl->phy_con6); + writel(mem->phy1_dq, &phy1_ctrl->phy_con6); + + writel(mem->phy0_tFS, &phy0_ctrl->phy_con10); + writel(mem->phy1_tFS, &phy1_ctrl->phy_con10); + + val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | + (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | + (mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) | + (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); + writel(val, &phy0_ctrl->phy_con12); + writel(val, &phy1_ctrl->phy_con12); + + /* Start DLL locking */ + writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT), + &phy0_ctrl->phy_con12); + writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT), + &phy1_ctrl->phy_con12); + + update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3); + + writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), + &dmc->concontrol); + + /* Memory Channel Inteleaving Size */ + writel(mem->iv_size, &dmc->ivcontrol); + + writel(mem->memconfig, &dmc->memconfig0); + writel(mem->memconfig, &dmc->memconfig1); + writel(mem->membaseconfig0, &dmc->membaseconfig0); + writel(mem->membaseconfig1, &dmc->membaseconfig1); + + /* Precharge Configuration */ + writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, + &dmc->prechconfig); + + /* Power Down mode Configuration */ + writel(mem->dpwrdn_cyc << PWRDNCONFIG_DPWRDN_CYC_SHIFT | + mem->dsref_cyc << PWRDNCONFIG_DSREF_CYC_SHIFT, + &dmc->pwrdnconfig); + + /* TimingRow, TimingData, TimingPower and Timingaref + * values as per Memory AC parameters + */ + writel(mem->timing_ref, &dmc->timingref); + writel(mem->timing_row, &dmc->timingrow); + writel(mem->timing_data, &dmc->timingdata); + writel(mem->timing_power, &dmc->timingpower); + + /* Send PALL command */ + dmc_config_prech(mem, &dmc->directcmd); + + /* Send NOP, MRS and ZQINIT commands */ + dmc_config_mrs(mem, &dmc->directcmd); + + if (mem->gate_leveling_enable) { + val = PHY_CON0_RESET_VAL; + val |= P0_CMD_EN; + writel(val, &phy0_ctrl->phy_con0); + writel(val, &phy1_ctrl->phy_con0); + + val = PHY_CON2_RESET_VAL; + val |= INIT_DESKEW_EN; + writel(val, &phy0_ctrl->phy_con2); + writel(val, &phy1_ctrl->phy_con2); + + val = PHY_CON0_RESET_VAL; + val |= P0_CMD_EN; + val |= BYTE_RDLVL_EN; + writel(val, &phy0_ctrl->phy_con0); + writel(val, &phy1_ctrl->phy_con0); + + val = (mem->ctrl_start_point << + PHY_CON12_CTRL_START_POINT_SHIFT) | + (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | + (mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) | + (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) | + (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); + writel(val, &phy0_ctrl->phy_con12); + writel(val, &phy1_ctrl->phy_con12); + + val = PHY_CON2_RESET_VAL; + val |= INIT_DESKEW_EN; + val |= RDLVL_GATE_EN; + writel(val, &phy0_ctrl->phy_con2); + writel(val, &phy1_ctrl->phy_con2); + + val = PHY_CON0_RESET_VAL; + val |= P0_CMD_EN; + val |= BYTE_RDLVL_EN; + val |= CTRL_SHGATE; + writel(val, &phy0_ctrl->phy_con0); + writel(val, &phy1_ctrl->phy_con0); + + val = PHY_CON1_RESET_VAL; + val &= ~(CTRL_GATEDURADJ_MASK); + writel(val, &phy0_ctrl->phy_con1); + writel(val, &phy1_ctrl->phy_con1); + + writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config); + i = TIMEOUT_US; + while ((readl(&dmc->phystatus) & + (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) != + (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) { + /* + * TODO(waihong): Comment on how long this take to + * timeout + */ + sdelay(100); + i--; + } + if (!i) + return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; + writel(CTRL_RDLVL_GATE_DISABLE, &dmc->rdlvl_config); + + writel(0, &phy0_ctrl->phy_con14); + writel(0, &phy1_ctrl->phy_con14); + + val = (mem->ctrl_start_point << + PHY_CON12_CTRL_START_POINT_SHIFT) | + (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | + (mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) | + (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) | + (mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) | + (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); + writel(val, &phy0_ctrl->phy_con12); + writel(val, &phy1_ctrl->phy_con12); + + update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3); + } + + /* Send PALL command */ + dmc_config_prech(mem, &dmc->directcmd); + + writel(mem->memcontrol, &dmc->memcontrol); + + /* Set DMC Concontrol and enable auto-refresh counter */ + writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT) + | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT), &dmc->concontrol); + return 0; +} +#endif + +#ifdef CONFIG_EXYNOS5420 +/** + * RAM address to use in the test. + * + * We'll use 4 words at this address and 4 at this address + 0x80 (Ares + * interleaves channels every 128 bytes). This will allow us to evaluate all of + * the chips in a 1 chip per channel (2GB) system and half the chips in a 2 + * chip per channel (4GB) system. We can't test the 2nd chip since we need to + * do tests before the 2nd chip is enabled. Looking at the 2nd chip isn't + * critical because the 1st and 2nd chip have very similar timings (they'd + * better have similar timings, since there's only a single adjustment that is + * shared by both chips). + */ +const unsigned int test_addr = CONFIG_SYS_SDRAM_BASE; + +/* Test pattern with which RAM will be tested */ +static const unsigned int test_pattern[] = { + 0x5a5a5a5a, + 0xa5a5a5a5, + 0xf0f0f0f0, + 0x0f0f0f0f, +}; + +/** + * This function is a test vector for sw read leveling, + * it compares the read data with the written data. + * + * @param ch DMC channel number + * @param byte_lane which DQS byte offset, + * possible values are 0,1,2,3 + * @return TRUE if memory was good, FALSE if not. + */ +static bool dmc_valid_window_test_vector(int ch, int byte_lane) +{ + unsigned int read_data; + unsigned int mask; + int i; + + mask = 0xFF << (8 * byte_lane); + + for (i = 0; i < ARRAY_SIZE(test_pattern); i++) { + read_data = readl(test_addr + i * 4 + ch * 0x80); + if ((read_data & mask) != (test_pattern[i] & mask)) + return false; + } + + return true; +} + +/** + * This function returns current read offset value. + * + * @param phy_ctrl pointer to the current phy controller + */ +static unsigned int dmc_get_read_offset_value(struct exynos5420_phy_control + *phy_ctrl) +{ + return readl(&phy_ctrl->phy_con4); +} + +/** + * This function performs resync, so that slave DLL is updated. + * + * @param phy_ctrl pointer to the current phy controller + */ +static void ddr_phy_set_do_resync(struct exynos5420_phy_control *phy_ctrl) +{ + setbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); + clrbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); +} + +/** + * This function sets read offset value register with 'offset'. + * + * ...we also call call ddr_phy_set_do_resync(). + * + * @param phy_ctrl pointer to the current phy controller + * @param offset offset to read DQS + */ +static void dmc_set_read_offset_value(struct exynos5420_phy_control *phy_ctrl, + unsigned int offset) +{ + writel(offset, &phy_ctrl->phy_con4); + ddr_phy_set_do_resync(phy_ctrl); +} + +/** + * Convert a 2s complement byte to a byte with a sign bit. + * + * NOTE: you shouldn't use normal math on the number returned by this function. + * As an example, -10 = 0xf6. After this function -10 = 0x8a. If you wanted + * to do math and get the average of 10 and -10 (should be 0): + * 0x8a + 0xa = 0x94 (-108) + * 0x94 / 2 = 0xca (-54) + * ...and 0xca = sign bit plus 0x4a, or -74 + * + * Also note that you lose the ability to represent -128 since there are two + * representations of 0. + * + * @param b The byte to convert in two's complement. + * @return The 7-bit value + sign bit. + */ + +unsigned char make_signed_byte(signed char b) +{ + if (b < 0) + return 0x80 | -b; + else + return b; +} + +/** + * Test various shifts starting at 'start' and going to 'end'. + * + * For each byte lane, we'll walk through shift starting at 'start' and going + * to 'end' (inclusive). When we are finally able to read the test pattern + * we'll store the value in the results array. + * + * @param phy_ctrl pointer to the current phy controller + * @param ch channel number + * @param start the start shift. -127 to 127 + * @param end the end shift. -127 to 127 + * @param results we'll store results for each byte lane. + */ + +void test_shifts(struct exynos5420_phy_control *phy_ctrl, int ch, + int start, int end, int results[NUM_BYTE_LANES]) +{ + int incr = (start < end) ? 1 : -1; + int byte_lane; + + for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { + int shift; + + dmc_set_read_offset_value(phy_ctrl, DEFAULT_DQS_X4); + results[byte_lane] = DEFAULT_DQS; + + for (shift = start; shift != (end + incr); shift += incr) { + unsigned int byte_offsetr; + unsigned int offsetr; + + byte_offsetr = make_signed_byte(shift); + + offsetr = dmc_get_read_offset_value(phy_ctrl); + offsetr &= ~(0xFF << (8 * byte_lane)); + offsetr |= (byte_offsetr << (8 * byte_lane)); + dmc_set_read_offset_value(phy_ctrl, offsetr); + + if (dmc_valid_window_test_vector(ch, byte_lane)) { + results[byte_lane] = shift; + break; + } + } + } +} + +/** + * This function performs SW read leveling to compensate DQ-DQS skew at + * receiver it first finds the optimal read offset value on each DQS + * then applies the value to PHY. + * + * Read offset value has its min margin and max margin. If read offset + * value exceeds its min or max margin, read data will have corruption. + * To avoid this we are doing sw read leveling. + * + * SW read leveling is: + * 1> Finding offset value's left_limit and right_limit + * 2> and calculate its center value + * 3> finally programs that center value to PHY + * 4> then PHY gets its optimal offset value. + * + * @param phy_ctrl pointer to the current phy controller + * @param ch channel number + * @param coarse_lock_val The coarse lock value read from PHY_CON13. + * (0 - 0x7f) + */ +static void software_find_read_offset(struct exynos5420_phy_control *phy_ctrl, + int ch, unsigned int coarse_lock_val) +{ + unsigned int offsetr_cent; + int byte_lane; + int left_limit; + int right_limit; + int left[NUM_BYTE_LANES]; + int right[NUM_BYTE_LANES]; + int i; + + /* Fill the memory with test patterns */ + for (i = 0; i < ARRAY_SIZE(test_pattern); i++) + writel(test_pattern[i], test_addr + i * 4 + ch * 0x80); + + /* Figure out the limits we'll test with; keep -127 < limit < 127 */ + left_limit = DEFAULT_DQS - coarse_lock_val; + right_limit = DEFAULT_DQS + coarse_lock_val; + if (right_limit > 127) + right_limit = 127; + + /* Fill in the location where reads were OK from left and right */ + test_shifts(phy_ctrl, ch, left_limit, right_limit, left); + test_shifts(phy_ctrl, ch, right_limit, left_limit, right); + + /* Make a final value by taking the center between the left and right */ + offsetr_cent = 0; + for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { + int temp_center; + unsigned int vmwc; + + temp_center = (left[byte_lane] + right[byte_lane]) / 2; + vmwc = make_signed_byte(temp_center); + offsetr_cent |= vmwc << (8 * byte_lane); + } + dmc_set_read_offset_value(phy_ctrl, offsetr_cent); +} + +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) +{ + struct exynos5420_clock *clk = + (struct exynos5420_clock *)samsung_get_base_clock(); + struct exynos5420_power *power = + (struct exynos5420_power *)samsung_get_base_power(); + struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl; + struct exynos5420_dmc *drex0, *drex1; + struct exynos5420_tzasc *tzasc0, *tzasc1; + struct exynos5_power *pmu; + uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1; + uint32_t lock0_info, lock1_info; + int chip; + int i; + + phy0_ctrl = (struct exynos5420_phy_control *)samsung_get_base_dmc_phy(); + phy1_ctrl = (struct exynos5420_phy_control *)(samsung_get_base_dmc_phy() + + DMC_OFFSET); + drex0 = (struct exynos5420_dmc *)samsung_get_base_dmc_ctrl(); + drex1 = (struct exynos5420_dmc *)(samsung_get_base_dmc_ctrl() + + DMC_OFFSET); + tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc(); + tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc() + + DMC_OFFSET); + pmu = (struct exynos5_power *)EXYNOS5420_POWER_BASE; + + if (CONFIG_NR_DRAM_BANKS > 4) { + /* Need both controllers. */ + mem->memcontrol |= DMC_MEMCONTROL_NUM_CHIP_2; + mem->chips_per_channel = 2; + mem->chips_to_configure = 2; + } else { + /* 2GB requires a single controller */ + mem->memcontrol |= DMC_MEMCONTROL_NUM_CHIP_1; + } + + /* Enable PAUSE for DREX */ + setbits_le32(&clk->pause, ENABLE_BIT); + + /* Enable BYPASS mode */ + setbits_le32(&clk->bpll_con1, BYPASS_EN); + + writel(MUX_BPLL_SEL_FOUTBPLL, &clk->src_cdrex); + do { + val = readl(&clk->mux_stat_cdrex); + val &= BPLL_SEL_MASK; + } while (val != FOUTBPLL); + + clrbits_le32(&clk->bpll_con1, BYPASS_EN); + + /* Specify the DDR memory type as DDR3 */ + val = readl(&phy0_ctrl->phy_con0); + val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT); + val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT); + writel(val, &phy0_ctrl->phy_con0); + + val = readl(&phy1_ctrl->phy_con0); + val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT); + val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT); + writel(val, &phy1_ctrl->phy_con0); + + /* Set Read Latency and Burst Length for PHY0 and PHY1 */ + val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) | + (mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT); + writel(val, &phy0_ctrl->phy_con42); + writel(val, &phy1_ctrl->phy_con42); + + val = readl(&phy0_ctrl->phy_con26); + val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET); + val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET); + writel(val, &phy0_ctrl->phy_con26); + + val = readl(&phy1_ctrl->phy_con26); + val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET); + val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET); + writel(val, &phy1_ctrl->phy_con26); + + /* + * Set Driver strength for CK, CKE, CS & CA to 0x7 + * Set Driver strength for Data Slice 0~3 to 0x7 + */ + val = (0x7 << CA_CK_DRVR_DS_OFFSET) | (0x7 << CA_CKE_DRVR_DS_OFFSET) | + (0x7 << CA_CS_DRVR_DS_OFFSET) | (0x7 << CA_ADR_DRVR_DS_OFFSET); + val |= (0x7 << DA_3_DS_OFFSET) | (0x7 << DA_2_DS_OFFSET) | + (0x7 << DA_1_DS_OFFSET) | (0x7 << DA_0_DS_OFFSET); + writel(val, &phy0_ctrl->phy_con39); + writel(val, &phy1_ctrl->phy_con39); + + /* ZQ Calibration */ + if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16, + &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17)) + return SETUP_ERR_ZQ_CALIBRATION_FAILURE; + + clrbits_le32(&phy0_ctrl->phy_con16, ZQ_CLK_DIV_EN); + clrbits_le32(&phy1_ctrl->phy_con16, ZQ_CLK_DIV_EN); + + /* DQ Signal */ + val = readl(&phy0_ctrl->phy_con14); + val |= mem->phy0_pulld_dqs; + writel(val, &phy0_ctrl->phy_con14); + val = readl(&phy1_ctrl->phy_con14); + val |= mem->phy1_pulld_dqs; + writel(val, &phy1_ctrl->phy_con14); + + val = MEM_TERM_EN | PHY_TERM_EN; + writel(val, &drex0->phycontrol0); + writel(val, &drex1->phycontrol0); + + writel(mem->concontrol | + (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) | + (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), + &drex0->concontrol); + writel(mem->concontrol | + (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) | + (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), + &drex1->concontrol); + + do { + val = readl(&drex0->phystatus); + } while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE); + do { + val = readl(&drex1->phystatus); + } while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE); + + clrbits_le32(&drex0->concontrol, DFI_INIT_START); + clrbits_le32(&drex1->concontrol, DFI_INIT_START); + + update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3); + update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3); + + /* + * Set Base Address: + * 0x2000_0000 ~ 0x5FFF_FFFF + * 0x6000_0000 ~ 0x9FFF_FFFF + */ + /* MEMBASECONFIG0 */ + val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_0) | + DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK); + writel(val, &tzasc0->membaseconfig0); + writel(val, &tzasc1->membaseconfig0); + + /* MEMBASECONFIG1 */ + val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_1) | + DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK); + writel(val, &tzasc0->membaseconfig1); + writel(val, &tzasc1->membaseconfig1); + + /* + * Memory Channel Inteleaving Size + * Ares Channel interleaving = 128 bytes + */ + /* MEMCONFIG0/1 */ + writel(mem->memconfig, &tzasc0->memconfig0); + writel(mem->memconfig, &tzasc1->memconfig0); + writel(mem->memconfig, &tzasc0->memconfig1); + writel(mem->memconfig, &tzasc1->memconfig1); + + /* Precharge Configuration */ + writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, + &drex0->prechconfig0); + writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, + &drex1->prechconfig0); + + /* + * TimingRow, TimingData, TimingPower and Timingaref + * values as per Memory AC parameters + */ + writel(mem->timing_ref, &drex0->timingref); + writel(mem->timing_ref, &drex1->timingref); + writel(mem->timing_row, &drex0->timingrow0); + writel(mem->timing_row, &drex1->timingrow0); + writel(mem->timing_data, &drex0->timingdata0); + writel(mem->timing_data, &drex1->timingdata0); + writel(mem->timing_power, &drex0->timingpower0); + writel(mem->timing_power, &drex1->timingpower0); + + if (reset) { + /* + * Send NOP, MRS and ZQINIT commands + * Sending MRS command will reset the DRAM. We should not be + * reseting the DRAM after resume, this will lead to memory + * corruption as DRAM content is lost after DRAM reset + */ + dmc_config_mrs(mem, &drex0->directcmd); + dmc_config_mrs(mem, &drex1->directcmd); + } + + /* + * Get PHY_CON13 from both phys. Gate CLKM around reading since + * PHY_CON13 is glitchy when CLKM is running. We're paranoid and + * wait until we get a "fine lock", though a coarse lock is probably + * OK (we only use the coarse numbers below). We try to gate the + * clock for as short a time as possible in case SDRAM is somehow + * sensitive. sdelay(10) in the loop is arbitrary to make sure + * there is some time for PHY_CON13 to get updated. In practice + * no delay appears to be needed. + */ + val = readl(&clk->gate_bus_cdrex); + while (true) { + writel(val & ~0x1, &clk->gate_bus_cdrex); + lock0_info = readl(&phy0_ctrl->phy_con13); + writel(val, &clk->gate_bus_cdrex); + + if ((lock0_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) + break; + + sdelay(10); + } + while (true) { + writel(val & ~0x2, &clk->gate_bus_cdrex); + lock1_info = readl(&phy1_ctrl->phy_con13); + writel(val, &clk->gate_bus_cdrex); + + if ((lock1_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) + break; + + sdelay(10); + } + + if (!reset) { + /* + * During Suspend-Resume & S/W-Reset, as soon as PMU releases + * pad retention, CKE goes high. This causes memory contents + * not to be retained during DRAM initialization. Therfore, + * there is a new control register(0x100431e8[28]) which lets us + * release pad retention and retain the memory content until the + * initialization is complete. + */ + writel(PAD_RETENTION_DRAM_COREBLK_VAL, + &power->pad_retention_dram_coreblk_option); + do { + val = readl(&power->pad_retention_dram_status); + } while (val != 0x1); + + /* + * CKE PAD retention disables DRAM self-refresh mode. + * Send auto refresh command for DRAM refresh. + */ + for (i = 0; i < 128; i++) { + for (chip = 0; chip < mem->chips_to_configure; chip++) { + writel(DIRECT_CMD_REFA | + (chip << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(DIRECT_CMD_REFA | + (chip << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } + } + } + + if (mem->gate_leveling_enable) { + writel(PHY_CON0_RESET_VAL, &phy0_ctrl->phy_con0); + writel(PHY_CON0_RESET_VAL, &phy1_ctrl->phy_con0); + + setbits_le32(&phy0_ctrl->phy_con0, P0_CMD_EN); + setbits_le32(&phy1_ctrl->phy_con0, P0_CMD_EN); + + val = PHY_CON2_RESET_VAL; + val |= INIT_DESKEW_EN; + writel(val, &phy0_ctrl->phy_con2); + writel(val, &phy1_ctrl->phy_con2); + + val = readl(&phy0_ctrl->phy_con1); + val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET); + writel(val, &phy0_ctrl->phy_con1); + + val = readl(&phy1_ctrl->phy_con1); + val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET); + writel(val, &phy1_ctrl->phy_con1); + + n_lock_w_phy0 = (lock0_info & CTRL_LOCK_COARSE_MASK) >> 2; + n_lock_r = readl(&phy0_ctrl->phy_con12); + n_lock_r &= ~CTRL_DLL_ON; + n_lock_r |= n_lock_w_phy0; + writel(n_lock_r, &phy0_ctrl->phy_con12); + + n_lock_w_phy1 = (lock1_info & CTRL_LOCK_COARSE_MASK) >> 2; + n_lock_r = readl(&phy1_ctrl->phy_con12); + n_lock_r &= ~CTRL_DLL_ON; + n_lock_r |= n_lock_w_phy1; + writel(n_lock_r, &phy1_ctrl->phy_con12); + + val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4; + for (chip = 0; chip < mem->chips_to_configure; chip++) { + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } + + setbits_le32(&phy0_ctrl->phy_con2, RDLVL_GATE_EN); + setbits_le32(&phy1_ctrl->phy_con2, RDLVL_GATE_EN); + + setbits_le32(&phy0_ctrl->phy_con0, CTRL_SHGATE); + setbits_le32(&phy1_ctrl->phy_con0, CTRL_SHGATE); + + val = readl(&phy0_ctrl->phy_con1); + val &= ~(CTRL_GATEDURADJ_MASK); + writel(val, &phy0_ctrl->phy_con1); + + val = readl(&phy1_ctrl->phy_con1); + val &= ~(CTRL_GATEDURADJ_MASK); + writel(val, &phy1_ctrl->phy_con1); + + writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config); + i = TIMEOUT_US; + while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) != + RDLVL_COMPLETE_CHO) && (i > 0)) { + /* + * TODO(waihong): Comment on how long this take to + * timeout + */ + sdelay(100); + i--; + } + if (!i) + return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; + writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config); + + writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config); + i = TIMEOUT_US; + while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) != + RDLVL_COMPLETE_CHO) && (i > 0)) { + /* + * TODO(waihong): Comment on how long this take to + * timeout + */ + sdelay(100); + i--; + } + if (!i) + return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; + writel(CTRL_RDLVL_GATE_DISABLE, &drex1->rdlvl_config); + + writel(0, &phy0_ctrl->phy_con14); + writel(0, &phy1_ctrl->phy_con14); + + val = (0x3 << DIRECT_CMD_BANK_SHIFT); + for (chip = 0; chip < mem->chips_to_configure; chip++) { + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } + + /* Common Settings for Leveling */ + val = PHY_CON12_RESET_VAL; + writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12); + writel((val + n_lock_w_phy1), &phy1_ctrl->phy_con12); + + setbits_le32(&phy0_ctrl->phy_con2, DLL_DESKEW_EN); + setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN); + } + + /* + * Do software read leveling + * + * Do this before we turn on auto refresh since the auto refresh can + * be in conflict with the resync operation that's part of setting + * read leveling. + */ + if (!reset) { + /* restore calibrated value after resume */ + dmc_set_read_offset_value(phy0_ctrl, readl(&pmu->pmu_spare1)); + dmc_set_read_offset_value(phy1_ctrl, readl(&pmu->pmu_spare2)); + } else { + software_find_read_offset(phy0_ctrl, 0, + CTRL_LOCK_COARSE(lock0_info)); + software_find_read_offset(phy1_ctrl, 1, + CTRL_LOCK_COARSE(lock1_info)); + /* save calibrated value to restore after resume */ + writel(dmc_get_read_offset_value(phy0_ctrl), &pmu->pmu_spare1); + writel(dmc_get_read_offset_value(phy1_ctrl), &pmu->pmu_spare2); + } + + /* Send PALL command */ + dmc_config_prech(mem, &drex0->directcmd); + dmc_config_prech(mem, &drex1->directcmd); + + writel(mem->memcontrol, &drex0->memcontrol); + writel(mem->memcontrol, &drex1->memcontrol); + + /* + * Set DMC Concontrol: Enable auto-refresh counter, provide + * read data fetch cycles and enable DREX auto set powerdown + * for input buffer of I/O in none read memory state. + */ + writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) | + (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)| + DMC_CONCONTROL_IO_PD_CON(0x2), + &drex0->concontrol); + writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) | + (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)| + DMC_CONCONTROL_IO_PD_CON(0x2), + &drex1->concontrol); + + /* + * Enable Clock Gating Control for DMC + * this saves around 25 mw dmc power as compared to the power + * consumption without these bits enabled + */ + setbits_le32(&drex0->cgcontrol, DMC_INTERNAL_CG); + setbits_le32(&drex1->cgcontrol, DMC_INTERNAL_CG); + + /* + * As per Exynos5800 UM ver 0.00 section 17.13.2.1 + * CONCONTROL register bit 3 [update_mode], Exynos5800 does not + * support the PHY initiated update. And it is recommended to set + * this field to 1'b1 during initialization + * + * When we apply PHY-initiated mode, DLL lock value is determined + * once at DMC init time and not updated later when we change the MIF + * voltage based on ASV group in kernel. Applying MC-initiated mode + * makes sure that DLL tracing is ON so that silicon is able to + * compensate the voltage variation. + */ + val = readl(&drex0->concontrol); + val |= CONCONTROL_UPDATE_MODE; + writel(val , &drex0->concontrol); + val = readl(&drex1->concontrol); + val |= CONCONTROL_UPDATE_MODE; + writel(val , &drex1->concontrol); + + return 0; +} +#endif |
