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-rw-r--r--src/import/generic/procedures/xml/attribute_info/generic_memory_si_attributes.xml175
1 files changed, 41 insertions, 134 deletions
diff --git a/src/import/generic/procedures/xml/attribute_info/generic_memory_si_attributes.xml b/src/import/generic/procedures/xml/attribute_info/generic_memory_si_attributes.xml
index 819336678..008a90974 100644
--- a/src/import/generic/procedures/xml/attribute_info/generic_memory_si_attributes.xml
+++ b/src/import/generic/procedures/xml/attribute_info/generic_memory_si_attributes.xml
@@ -100,8 +100,7 @@
<id>ATTR_MEM_SI_DRAM_DRV_IMP_DQ_DQS</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- DQ and DQS Drive Impedance.
+ Array[DIMM][RANK] DQ and DQS Drive Impedance.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -116,10 +115,9 @@
<id>ATTR_MEM_SI_DRAM_PREAMBLE</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Number of clocks used for read/write preamble. Calibration only uses 1 nCK preamble (DEFAULT). Mainline has both 1 nCK and 2 nCK preamble option.
- The value of "0" means 1 nCK preamble, the value of "1" means 2 nCK preamble. Bit 3 for READ preamble, and Bit 7 for WRITE preamble.
- E.g. 0b00010001 means 2 nCK preamble for both READ and WRITE
+ Number of clocks used for read/write preamble. Calibration only uses 1 nCK preamble (DEFAULT). Mainline has both 1 nCK and 2 nCK preamble option.
+ The value of "0" means 1 nCK preamble, the value of "1" means 2 nCK preamble. Bit 3 for READ preamble, and Bit 7 for WRITE preamble.
+ E.g. 0b00010001 means 2 nCK preamble for both READ and WRITE
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -127,15 +125,13 @@
<enum>READ_PREAMBLE_BIT = 3, WRITE_PREAMBLE_BIT = 7</enum>
<mssUnits>nCK</mssUnits>
<mssAccessorName>si_dram_preamble</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_DRAM_RTT_NOM</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- DRAM side Nominal Termination Resistance in Ohms.
+ Array[DIMM][RANK] DRAM side Nominal Termination Resistance in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -150,8 +146,7 @@
<id>ATTR_MEM_SI_DRAM_RTT_PARK</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- DRAM side Park Termination Resistance in Ohms.
+ Array[DIMM][RANK] DRAM side Park Termination Resistance in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -166,8 +161,7 @@
<id>ATTR_MEM_SI_DRAM_RTT_WR</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- DRAM side Write Termination Resistance in Ohms.
+ Array[DIMM][RANK] DRAM side Write Termination Resistance in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -179,101 +173,23 @@
</attribute>
<attribute>
- <id>ATTR_MEM_SI_VREF_DQ_TRAIN_VALUE</id>
- <targetType>TARGET_TYPE_MEM_PORT</targetType>
- <description>
- ARRAY[DIMM][RANK]
- vrefdq_train value. This is for DDR4 MRS6.
- </description>
- <initToZero></initToZero>
- <valueType>uint8</valueType>
- <writeable/>
- <array>2 4</array>
- <mssAccessorName>si_vref_dq_train_value</mssAccessorName>
- </attribute>
-
- <attribute>
- <id>ATTR_MEM_SI_VREF_DQ_TRAIN_RANGE</id>
- <targetType>TARGET_TYPE_MEM_PORT</targetType>
- <description>
- ARRAY[DIMM][RANK]
- vrefdq_train range. This is for DDR4 MRS6.
- </description>
- <initToZero></initToZero>
- <valueType>uint8</valueType>
- <enum>RANGE1 = 0, RANGE2 = 1</enum>
- <writeable/>
- <array>2 4</array>
- <mssAccessorName>si_vref_dq_train_range</mssAccessorName>
- </attribute>
-
- <attribute>
- <id>ATTR_MEM_SI_GEARDOWN_MODE</id>
- <targetType>TARGET_TYPE_MEM_PORT</targetType>
- <description>
- ARRAY[DIMM][RANK]
- Gear Down Mode.
- This is for DDR4 MRS3.
- Each memory channel will have a value.
- </description>
- <initToZero></initToZero>
- <valueType>uint8</valueType>
- <enum>HALF =0, QUARTER=1</enum>
- <writeable/>
- <array>2 4</array>
- <mssAccessorName>si_geardown_mode</mssAccessorName>
- </attribute>
-
- <attribute>
- <id>ATTR_MEM_SI_MC_DRV_DQ_DQS</id>
- <targetType>TARGET_TYPE_MEM_PORT</targetType>
- <description>
- Array[DIMM][RANK]
- Tx drive impedance for DQ/DQS of all ranks in ohms
- </description>
- <initToZero></initToZero>
- <valueType>uint8</valueType>
- <writeable/>
- <mssAccessorName>si_mc_drv_dq_dqs</mssAccessorName>
- <array>2 4</array>
- </attribute>
-
- <attribute>
- <id>ATTR_MEM_SI_MC_RCV_EQ_DQ_DQS</id>
- <targetType>TARGET_TYPE_MEM_PORT</targetType>
- <description>
- Array[DIMM][RANK]
- Memory Controller side Receiver Equalization for Data and Data Strobe Lines.
- </description>
- <initToZero></initToZero>
- <valueType>uint8</valueType>
- <writeable/>
- <enum>DISABLE = 0, ENABLE = 1</enum>
- <mssAccessorName>si_mc_rcv_eq_dq_dqs</mssAccessorName>
- <array>2 4</array>
- </attribute>
-
- <attribute>
<id>ATTR_MEM_SI_MC_DRV_EQ_DQ_DQS</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Equalization for Data and Data Strobe Lines.
+ Memory Controller side Drive Equalization for Data and Data Strobe Lines.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
<writeable/>
<enum>DISABLE = 0, FFE = 1</enum>
<mssAccessorName>si_mc_drv_eq_dq_dqs</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_IMP_CLK</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Impedance for Clock in Ohms.
+ Memory Controller side Drive Impedance for Clock in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -281,15 +197,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_imp_clk</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_IMP_CMD_ADDR</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Impedance for Address, Bank Address, Bank Group and Activate Lines in Ohms.
+ Memory Controller side Drive Impedance for Address, Bank Address, Bank Group and Activate Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -297,15 +211,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_imp_cmd_addr</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_IMP_CNTL</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Impedance for Clock Enable, ODT, Parity, and Reset Lines in Ohms.
+ Memory Controller side Drive Impedance for Clock Enable, ODT, Parity, and Reset Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -313,15 +225,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_imp_cntl</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_IMP_CSCID</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Impedance for Chip Select and Chip ID Lines in Ohms.
+ Memory Controller side Drive Impedance for Chip Select and Chip ID Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -329,15 +239,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_imp_cscid</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_IMP_DQ_DQS_PULL_DOWN</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Impedance Pull Down for Data and Data Strobe Lines in Ohms.
+ Array[PSTATE] Memory Controller side Drive Impedance Pull Down for Data and Data Strobe Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -345,15 +253,14 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_imp_dq_dqs_pull_down</mssAccessorName>
- <array>2 4</array>
+ <array>1</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_IMP_DQ_DQS_PULL_UP</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Impedance Pull Up for Data and Data Strobe Lines in Ohms.
+ Array[PSTATE] Memory Controller side Drive Impedance Pull Up for Data and Data Strobe Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -361,15 +268,14 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_imp_dq_dqs_pull_up</mssAccessorName>
- <array>2 4</array>
+ <array>1</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_SLEW_RATE_CLK</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Slew Rate for Clock in Ohms.
+ Memory Controller side Drive Slew Rate for Clock in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -377,15 +283,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_slew_rate_clk</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_SLEW_RATE_CMD_ADDR</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Slew Rate for Address, Bank Address, Bank Group and Activate Lines in Ohms.
+ Memory Controller side Drive Slew Rate for Address, Bank Address, Bank Group and Activate Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -393,15 +297,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_slew_rate_cmd_addr</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_SLEW_RATE_CNTL</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Slew Rate for Clock Enable, ODT, Parity, and Reset Lines in Ohms.
+ Memory Controller side Drive Slew Rate for Clock Enable, ODT, Parity, and Reset Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -409,15 +311,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_slew_rate_cntl</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_SLEW_RATE_CSCID</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Slew Rate for Chip Select and Chip ID Lines in Ohms.
+ Memory Controller side Drive Slew Rate for Chip Select and Chip ID Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -425,15 +325,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_slew_rate_cscid</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_DRV_SLEW_RATE_DQ_DQS</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Drive Slew Rate for Data and Data Strobe Lines in Ohms.
+ Array[PSTATE] Memory Controller side Drive Slew Rate for Data and Data Strobe Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -441,7 +339,20 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_drv_slew_rate_dq_dqs</mssAccessorName>
- <array>2 4</array>
+ <array>1</array>
+ </attribute>
+
+ <attribute>
+ <id>ATTR_MEM_SI_MC_RCV_EQ_DQ_DQS</id>
+ <targetType>TARGET_TYPE_MEM_PORT</targetType>
+ <description>
+ Memory Controller side Receiver Equalization for Data and Data Strobe Lines.
+ </description>
+ <initToZero></initToZero>
+ <valueType>uint8</valueType>
+ <writeable/>
+ <enum>DISABLE = 0, DFE = 1</enum>
+ <mssAccessorName>si_mc_rcv_eq_dq_dqs</mssAccessorName>
</attribute>
<attribute>
@@ -456,15 +367,13 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_rcv_imp_alert_n</mssAccessorName>
- <array>2 4</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_MC_RCV_IMP_DQ_DQS</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- Memory Controller side Receiver Impedance. Data and Data Strobe Lines in Ohms.
+ Array[PSTATE] Memory Controller side Receiver Impedance. Data and Data Strobe Lines in Ohms.
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -472,16 +381,15 @@
<enum>DISABLE = 0</enum>
<mssUnits>ohm</mssUnits>
<mssAccessorName>si_mc_rcv_imp_dq_dqs</mssAccessorName>
- <array>2 4</array>
+ <array>1</array>
</attribute>
<attribute>
<id>ATTR_MEM_SI_ODT_RD</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- READ, On Die Termination triggering bitmap. Use bitmap to determine which ODT to fire for the designated rank.
- The bits in 8 bit field are [Dimm0 ODT0][Dimm0 ODT1][N/A][N/A][Dimm1 ODT0][Dimm1 ODT1][N/A][N/A]
+ Array[DIMM][RANK] READ, On Die Termination triggering bitmap. Use bitmap to determine which ODT to fire for the designated rank.
+ The bits in 8 bit field are [Dimm0 ODT0][Dimm0 ODT1][N/A][N/A][Dimm1 ODT0][Dimm1 ODT1][N/A][N/A]
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
@@ -494,9 +402,8 @@
<id>ATTR_MEM_SI_ODT_WR</id>
<targetType>TARGET_TYPE_MEM_PORT</targetType>
<description>
- Array[DIMM][RANK]
- WRITE, On Die Termination triggering bitmap. Use bitmap to determine which ODT to fire for the designated rank.
- The bits in 8 bit field are [Dimm0 ODT0][Dimm0 ODT1][N/A][N/A][Dimm1 ODT0][Dimm1 ODT1][N/A][N/A]
+ Array[DIMM][RANK] WRITE, On Die Termination triggering bitmap. Use bitmap to determine which ODT to fire for the designated rank.
+ The bits in 8 bit field are [Dimm0 ODT0][Dimm0 ODT1][N/A][N/A][Dimm1 ODT0][Dimm1 ODT1][N/A][N/A]
</description>
<initToZero></initToZero>
<valueType>uint8</valueType>
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