/* * DDR3 mem setup file for board based on EXYNOS5 * * Copyright (C) 2012 Samsung Electronics * * SPDX-License-Identifier: GPL-2.0+ */ #include #include #include #include #include #include #include #include "common_setup.h" #include "exynos5_setup.h" #include "clock_init.h" #define TIMEOUT_US 10000 #define NUM_BYTE_LANES 4 #define DEFAULT_DQS 8 #define DEFAULT_DQS_X4 (DEFAULT_DQS << 24) || (DEFAULT_DQS << 16) \ || (DEFAULT_DQS << 8) || (DEFAULT_DQS << 0) #ifdef CONFIG_EXYNOS5250 static void reset_phy_ctrl(void) { struct exynos5_clock *clk = (struct exynos5_clock *)samsung_get_base_clock(); writel(DDR3PHY_CTRL_PHY_RESET_OFF, &clk->lpddr3phy_ctrl); writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl); } int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { unsigned int val; struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl; struct exynos5_dmc *dmc; int i; phy0_ctrl = (struct exynos5_phy_control *)samsung_get_base_dmc_phy(); phy1_ctrl = (struct exynos5_phy_control *)(samsung_get_base_dmc_phy() + DMC_OFFSET); dmc = (struct exynos5_dmc *)samsung_get_base_dmc_ctrl(); if (reset) reset_phy_ctrl(); /* Set Impedance Output Driver */ val = (mem->impedance << CA_CK_DRVR_DS_OFFSET) | (mem->impedance << CA_CKE_DRVR_DS_OFFSET) | (mem->impedance << CA_CS_DRVR_DS_OFFSET) | (mem->impedance << CA_ADR_DRVR_DS_OFFSET); writel(val, &phy0_ctrl->phy_con39); writel(val, &phy1_ctrl->phy_con39); /* Set Read Latency and Burst Length for PHY0 and PHY1 */ val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) | (mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT); writel(val, &phy0_ctrl->phy_con42); writel(val, &phy1_ctrl->phy_con42); /* ZQ Calibration */ if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16, &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17)) return SETUP_ERR_ZQ_CALIBRATION_FAILURE; /* DQ Signal */ writel(mem->phy0_pulld_dqs, &phy0_ctrl->phy_con14); writel(mem->phy1_pulld_dqs, &phy1_ctrl->phy_con14); writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT) | (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT), &dmc->concontrol); update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3); /* DQS Signal */ writel(mem->phy0_dqs, &phy0_ctrl->phy_con4); writel(mem->phy1_dqs, &phy1_ctrl->phy_con4); writel(mem->phy0_dq, &phy0_ctrl->phy_con6); writel(mem->phy1_dq, &phy1_ctrl->phy_con6); writel(mem->phy0_tFS, &phy0_ctrl->phy_con10); writel(mem->phy1_tFS, &phy1_ctrl->phy_con10); val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | (mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) | (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); writel(val, &phy0_ctrl->phy_con12); writel(val, &phy1_ctrl->phy_con12); /* Start DLL locking */ writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT), &phy0_ctrl->phy_con12); writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT), &phy1_ctrl->phy_con12); update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3); writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), &dmc->concontrol); /* Memory Channel Inteleaving Size */ writel(mem->iv_size, &dmc->ivcontrol); writel(mem->memconfig, &dmc->memconfig0); writel(mem->memconfig, &dmc->memconfig1); writel(mem->membaseconfig0, &dmc->membaseconfig0); writel(mem->membaseconfig1, &dmc->membaseconfig1); /* Precharge Configuration */ writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, &dmc->prechconfig); /* Power Down mode Configuration */ writel(mem->dpwrdn_cyc << PWRDNCONFIG_DPWRDN_CYC_SHIFT | mem->dsref_cyc << PWRDNCONFIG_DSREF_CYC_SHIFT, &dmc->pwrdnconfig); /* TimingRow, TimingData, TimingPower and Timingaref * values as per Memory AC parameters */ writel(mem->timing_ref, &dmc->timingref); writel(mem->timing_row, &dmc->timingrow); writel(mem->timing_data, &dmc->timingdata); writel(mem->timing_power, &dmc->timingpower); /* Send PALL command */ dmc_config_prech(mem, &dmc->directcmd); /* Send NOP, MRS and ZQINIT commands */ dmc_config_mrs(mem, &dmc->directcmd); if (mem->gate_leveling_enable) { val = PHY_CON0_RESET_VAL; val |= P0_CMD_EN; writel(val, &phy0_ctrl->phy_con0); writel(val, &phy1_ctrl->phy_con0); val = PHY_CON2_RESET_VAL; val |= INIT_DESKEW_EN; writel(val, &phy0_ctrl->phy_con2); writel(val, &phy1_ctrl->phy_con2); val = PHY_CON0_RESET_VAL; val |= P0_CMD_EN; val |= BYTE_RDLVL_EN; writel(val, &phy0_ctrl->phy_con0); writel(val, &phy1_ctrl->phy_con0); val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | (mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) | (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); writel(val, &phy0_ctrl->phy_con12); writel(val, &phy1_ctrl->phy_con12); val = PHY_CON2_RESET_VAL; val |= INIT_DESKEW_EN; val |= RDLVL_GATE_EN; writel(val, &phy0_ctrl->phy_con2); writel(val, &phy1_ctrl->phy_con2); val = PHY_CON0_RESET_VAL; val |= P0_CMD_EN; val |= BYTE_RDLVL_EN; val |= CTRL_SHGATE; writel(val, &phy0_ctrl->phy_con0); writel(val, &phy1_ctrl->phy_con0); val = PHY_CON1_RESET_VAL; val &= ~(CTRL_GATEDURADJ_MASK); writel(val, &phy0_ctrl->phy_con1); writel(val, &phy1_ctrl->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config); i = TIMEOUT_US; while ((readl(&dmc->phystatus) & (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) != (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) { /* * TODO(waihong): Comment on how long this take to * timeout */ sdelay(100); i--; } if (!i) return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; writel(CTRL_RDLVL_GATE_DISABLE, &dmc->rdlvl_config); writel(0, &phy0_ctrl->phy_con14); writel(0, &phy1_ctrl->phy_con14); val = (mem->ctrl_start_point << PHY_CON12_CTRL_START_POINT_SHIFT) | (mem->ctrl_inc << PHY_CON12_CTRL_INC_SHIFT) | (mem->ctrl_force << PHY_CON12_CTRL_FORCE_SHIFT) | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT) | (mem->ctrl_dll_on << PHY_CON12_CTRL_DLL_ON_SHIFT) | (mem->ctrl_ref << PHY_CON12_CTRL_REF_SHIFT); writel(val, &phy0_ctrl->phy_con12); writel(val, &phy1_ctrl->phy_con12); update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3); } /* Send PALL command */ dmc_config_prech(mem, &dmc->directcmd); writel(mem->memcontrol, &dmc->memcontrol); /* Set DMC Concontrol and enable auto-refresh counter */ writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT) | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT), &dmc->concontrol); return 0; } #endif #ifdef CONFIG_EXYNOS5420 /** * RAM address to use in the test. * * We'll use 4 words at this address and 4 at this address + 0x80 (Ares * interleaves channels every 128 bytes). This will allow us to evaluate all of * the chips in a 1 chip per channel (2GB) system and half the chips in a 2 * chip per channel (4GB) system. We can't test the 2nd chip since we need to * do tests before the 2nd chip is enabled. Looking at the 2nd chip isn't * critical because the 1st and 2nd chip have very similar timings (they'd * better have similar timings, since there's only a single adjustment that is * shared by both chips). */ const unsigned int test_addr = CONFIG_SYS_SDRAM_BASE; /* Test pattern with which RAM will be tested */ static const unsigned int test_pattern[] = { 0x5a5a5a5a, 0xa5a5a5a5, 0xf0f0f0f0, 0x0f0f0f0f, }; /** * This function is a test vector for sw read leveling, * it compares the read data with the written data. * * @param ch DMC channel number * @param byte_lane which DQS byte offset, * possible values are 0,1,2,3 * @return TRUE if memory was good, FALSE if not. */ static bool dmc_valid_window_test_vector(int ch, int byte_lane) { unsigned int read_data; unsigned int mask; int i; mask = 0xFF << (8 * byte_lane); for (i = 0; i < ARRAY_SIZE(test_pattern); i++) { read_data = readl(test_addr + i * 4 + ch * 0x80); if ((read_data & mask) != (test_pattern[i] & mask)) return false; } return true; } /** * This function returns current read offset value. * * @param phy_ctrl pointer to the current phy controller */ static unsigned int dmc_get_read_offset_value(struct exynos5420_phy_control *phy_ctrl) { return readl(&phy_ctrl->phy_con4); } /** * This function performs resync, so that slave DLL is updated. * * @param phy_ctrl pointer to the current phy controller */ static void ddr_phy_set_do_resync(struct exynos5420_phy_control *phy_ctrl) { setbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); clrbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); } /** * This function sets read offset value register with 'offset'. * * ...we also call call ddr_phy_set_do_resync(). * * @param phy_ctrl pointer to the current phy controller * @param offset offset to read DQS */ static void dmc_set_read_offset_value(struct exynos5420_phy_control *phy_ctrl, unsigned int offset) { writel(offset, &phy_ctrl->phy_con4); ddr_phy_set_do_resync(phy_ctrl); } /** * Convert a 2s complement byte to a byte with a sign bit. * * NOTE: you shouldn't use normal math on the number returned by this function. * As an example, -10 = 0xf6. After this function -10 = 0x8a. If you wanted * to do math and get the average of 10 and -10 (should be 0): * 0x8a + 0xa = 0x94 (-108) * 0x94 / 2 = 0xca (-54) * ...and 0xca = sign bit plus 0x4a, or -74 * * Also note that you lose the ability to represent -128 since there are two * representations of 0. * * @param b The byte to convert in two's complement. * @return The 7-bit value + sign bit. */ unsigned char make_signed_byte(signed char b) { if (b < 0) return 0x80 | -b; else return b; } /** * Test various shifts starting at 'start' and going to 'end'. * * For each byte lane, we'll walk through shift starting at 'start' and going * to 'end' (inclusive). When we are finally able to read the test pattern * we'll store the value in the results array. * * @param phy_ctrl pointer to the current phy controller * @param ch channel number * @param start the start shift. -127 to 127 * @param end the end shift. -127 to 127 * @param results we'll store results for each byte lane. */ void test_shifts(struct exynos5420_phy_control *phy_ctrl, int ch, int start, int end, int results[NUM_BYTE_LANES]) { int incr = (start < end) ? 1 : -1; int byte_lane; for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { int shift; dmc_set_read_offset_value(phy_ctrl, DEFAULT_DQS_X4); results[byte_lane] = DEFAULT_DQS; for (shift = start; shift != (end + incr); shift += incr) { unsigned int byte_offsetr; unsigned int offsetr; byte_offsetr = make_signed_byte(shift); offsetr = dmc_get_read_offset_value(phy_ctrl); offsetr &= ~(0xFF << (8 * byte_lane)); offsetr |= (byte_offsetr << (8 * byte_lane)); dmc_set_read_offset_value(phy_ctrl, offsetr); if (dmc_valid_window_test_vector(ch, byte_lane)) { results[byte_lane] = shift; break; } } } } /** * This function performs SW read leveling to compensate DQ-DQS skew at * receiver it first finds the optimal read offset value on each DQS * then applies the value to PHY. * * Read offset value has its min margin and max margin. If read offset * value exceeds its min or max margin, read data will have corruption. * To avoid this we are doing sw read leveling. * * SW read leveling is: * 1> Finding offset value's left_limit and right_limit * 2> and calculate its center value * 3> finally programs that center value to PHY * 4> then PHY gets its optimal offset value. * * @param phy_ctrl pointer to the current phy controller * @param ch channel number * @param coarse_lock_val The coarse lock value read from PHY_CON13. * (0 - 0x7f) */ static void software_find_read_offset(struct exynos5420_phy_control *phy_ctrl, int ch, unsigned int coarse_lock_val) { unsigned int offsetr_cent; int byte_lane; int left_limit; int right_limit; int left[NUM_BYTE_LANES]; int right[NUM_BYTE_LANES]; int i; /* Fill the memory with test patterns */ for (i = 0; i < ARRAY_SIZE(test_pattern); i++) writel(test_pattern[i], test_addr + i * 4 + ch * 0x80); /* Figure out the limits we'll test with; keep -127 < limit < 127 */ left_limit = DEFAULT_DQS - coarse_lock_val; right_limit = DEFAULT_DQS + coarse_lock_val; if (right_limit > 127) right_limit = 127; /* Fill in the location where reads were OK from left and right */ test_shifts(phy_ctrl, ch, left_limit, right_limit, left); test_shifts(phy_ctrl, ch, right_limit, left_limit, right); /* Make a final value by taking the center between the left and right */ offsetr_cent = 0; for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { int temp_center; unsigned int vmwc; temp_center = (left[byte_lane] + right[byte_lane]) / 2; vmwc = make_signed_byte(temp_center); offsetr_cent |= vmwc << (8 * byte_lane); } dmc_set_read_offset_value(phy_ctrl, offsetr_cent); } int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { struct exynos5420_clock *clk = (struct exynos5420_clock *)samsung_get_base_clock(); struct exynos5420_power *power = (struct exynos5420_power *)samsung_get_base_power(); struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl; struct exynos5420_dmc *drex0, *drex1; struct exynos5420_tzasc *tzasc0, *tzasc1; struct exynos5_power *pmu; uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1; uint32_t lock0_info, lock1_info; int chip; int i; phy0_ctrl = (struct exynos5420_phy_control *)samsung_get_base_dmc_phy(); phy1_ctrl = (struct exynos5420_phy_control *)(samsung_get_base_dmc_phy() + DMC_OFFSET); drex0 = (struct exynos5420_dmc *)samsung_get_base_dmc_ctrl(); drex1 = (struct exynos5420_dmc *)(samsung_get_base_dmc_ctrl() + DMC_OFFSET); tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc(); tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc() + DMC_OFFSET); pmu = (struct exynos5_power *)EXYNOS5420_POWER_BASE; if (CONFIG_NR_DRAM_BANKS > 4) { /* Need both controllers. */ mem->memcontrol |= DMC_MEMCONTROL_NUM_CHIP_2; mem->chips_per_channel = 2; mem->chips_to_configure = 2; } else { /* 2GB requires a single controller */ mem->memcontrol |= DMC_MEMCONTROL_NUM_CHIP_1; } /* Enable PAUSE for DREX */ setbits_le32(&clk->pause, ENABLE_BIT); /* Enable BYPASS mode */ setbits_le32(&clk->bpll_con1, BYPASS_EN); writel(MUX_BPLL_SEL_FOUTBPLL, &clk->src_cdrex); do { val = readl(&clk->mux_stat_cdrex); val &= BPLL_SEL_MASK; } while (val != FOUTBPLL); clrbits_le32(&clk->bpll_con1, BYPASS_EN); /* Specify the DDR memory type as DDR3 */ val = readl(&phy0_ctrl->phy_con0); val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT); val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT); writel(val, &phy0_ctrl->phy_con0); val = readl(&phy1_ctrl->phy_con0); val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT); val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT); writel(val, &phy1_ctrl->phy_con0); /* Set Read Latency and Burst Length for PHY0 and PHY1 */ val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) | (mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT); writel(val, &phy0_ctrl->phy_con42); writel(val, &phy1_ctrl->phy_con42); val = readl(&phy0_ctrl->phy_con26); val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET); val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET); writel(val, &phy0_ctrl->phy_con26); val = readl(&phy1_ctrl->phy_con26); val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET); val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET); writel(val, &phy1_ctrl->phy_con26); /* * Set Driver strength for CK, CKE, CS & CA to 0x7 * Set Driver strength for Data Slice 0~3 to 0x7 */ val = (0x7 << CA_CK_DRVR_DS_OFFSET) | (0x7 << CA_CKE_DRVR_DS_OFFSET) | (0x7 << CA_CS_DRVR_DS_OFFSET) | (0x7 << CA_ADR_DRVR_DS_OFFSET); val |= (0x7 << DA_3_DS_OFFSET) | (0x7 << DA_2_DS_OFFSET) | (0x7 << DA_1_DS_OFFSET) | (0x7 << DA_0_DS_OFFSET); writel(val, &phy0_ctrl->phy_con39); writel(val, &phy1_ctrl->phy_con39); /* ZQ Calibration */ if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16, &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17)) return SETUP_ERR_ZQ_CALIBRATION_FAILURE; clrbits_le32(&phy0_ctrl->phy_con16, ZQ_CLK_DIV_EN); clrbits_le32(&phy1_ctrl->phy_con16, ZQ_CLK_DIV_EN); /* DQ Signal */ val = readl(&phy0_ctrl->phy_con14); val |= mem->phy0_pulld_dqs; writel(val, &phy0_ctrl->phy_con14); val = readl(&phy1_ctrl->phy_con14); val |= mem->phy1_pulld_dqs; writel(val, &phy1_ctrl->phy_con14); val = MEM_TERM_EN | PHY_TERM_EN; writel(val, &drex0->phycontrol0); writel(val, &drex1->phycontrol0); writel(mem->concontrol | (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), &drex0->concontrol); writel(mem->concontrol | (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT), &drex1->concontrol); do { val = readl(&drex0->phystatus); } while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE); do { val = readl(&drex1->phystatus); } while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE); clrbits_le32(&drex0->concontrol, DFI_INIT_START); clrbits_le32(&drex1->concontrol, DFI_INIT_START); update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3); update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3); /* * Set Base Address: * 0x2000_0000 ~ 0x5FFF_FFFF * 0x6000_0000 ~ 0x9FFF_FFFF */ /* MEMBASECONFIG0 */ val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_0) | DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK); writel(val, &tzasc0->membaseconfig0); writel(val, &tzasc1->membaseconfig0); /* MEMBASECONFIG1 */ val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_1) | DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK); writel(val, &tzasc0->membaseconfig1); writel(val, &tzasc1->membaseconfig1); /* * Memory Channel Inteleaving Size * Ares Channel interleaving = 128 bytes */ /* MEMCONFIG0/1 */ writel(mem->memconfig, &tzasc0->memconfig0); writel(mem->memconfig, &tzasc1->memconfig0); writel(mem->memconfig, &tzasc0->memconfig1); writel(mem->memconfig, &tzasc1->memconfig1); /* Precharge Configuration */ writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, &drex0->prechconfig0); writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT, &drex1->prechconfig0); /* * TimingRow, TimingData, TimingPower and Timingaref * values as per Memory AC parameters */ writel(mem->timing_ref, &drex0->timingref); writel(mem->timing_ref, &drex1->timingref); writel(mem->timing_row, &drex0->timingrow0); writel(mem->timing_row, &drex1->timingrow0); writel(mem->timing_data, &drex0->timingdata0); writel(mem->timing_data, &drex1->timingdata0); writel(mem->timing_power, &drex0->timingpower0); writel(mem->timing_power, &drex1->timingpower0); if (reset) { /* * Send NOP, MRS and ZQINIT commands * Sending MRS command will reset the DRAM. We should not be * reseting the DRAM after resume, this will lead to memory * corruption as DRAM content is lost after DRAM reset */ dmc_config_mrs(mem, &drex0->directcmd); dmc_config_mrs(mem, &drex1->directcmd); } /* * Get PHY_CON13 from both phys. Gate CLKM around reading since * PHY_CON13 is glitchy when CLKM is running. We're paranoid and * wait until we get a "fine lock", though a coarse lock is probably * OK (we only use the coarse numbers below). We try to gate the * clock for as short a time as possible in case SDRAM is somehow * sensitive. sdelay(10) in the loop is arbitrary to make sure * there is some time for PHY_CON13 to get updated. In practice * no delay appears to be needed. */ val = readl(&clk->gate_bus_cdrex); while (true) { writel(val & ~0x1, &clk->gate_bus_cdrex); lock0_info = readl(&phy0_ctrl->phy_con13); writel(val, &clk->gate_bus_cdrex); if ((lock0_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) break; sdelay(10); } while (true) { writel(val & ~0x2, &clk->gate_bus_cdrex); lock1_info = readl(&phy1_ctrl->phy_con13); writel(val, &clk->gate_bus_cdrex); if ((lock1_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) break; sdelay(10); } if (!reset) { /* * During Suspend-Resume & S/W-Reset, as soon as PMU releases * pad retention, CKE goes high. This causes memory contents * not to be retained during DRAM initialization. Therfore, * there is a new control register(0x100431e8[28]) which lets us * release pad retention and retain the memory content until the * initialization is complete. */ writel(PAD_RETENTION_DRAM_COREBLK_VAL, &power->pad_retention_dram_coreblk_option); do { val = readl(&power->pad_retention_dram_status); } while (val != 0x1); /* * CKE PAD retention disables DRAM self-refresh mode. * Send auto refresh command for DRAM refresh. */ for (i = 0; i < 128; i++) { for (chip = 0; chip < mem->chips_to_configure; chip++) { writel(DIRECT_CMD_REFA | (chip << DIRECT_CMD_CHIP_SHIFT), &drex0->directcmd); writel(DIRECT_CMD_REFA | (chip << DIRECT_CMD_CHIP_SHIFT), &drex1->directcmd); } } } if (mem->gate_leveling_enable) { writel(PHY_CON0_RESET_VAL, &phy0_ctrl->phy_con0); writel(PHY_CON0_RESET_VAL, &phy1_ctrl->phy_con0); setbits_le32(&phy0_ctrl->phy_con0, P0_CMD_EN); setbits_le32(&phy1_ctrl->phy_con0, P0_CMD_EN); val = PHY_CON2_RESET_VAL; val |= INIT_DESKEW_EN; writel(val, &phy0_ctrl->phy_con2); writel(val, &phy1_ctrl->phy_con2); val = readl(&phy0_ctrl->phy_con1); val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET); writel(val, &phy0_ctrl->phy_con1); val = readl(&phy1_ctrl->phy_con1); val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET); writel(val, &phy1_ctrl->phy_con1); n_lock_w_phy0 = (lock0_info & CTRL_LOCK_COARSE_MASK) >> 2; n_lock_r = readl(&phy0_ctrl->phy_con12); n_lock_r &= ~CTRL_DLL_ON; n_lock_r |= n_lock_w_phy0; writel(n_lock_r, &phy0_ctrl->phy_con12); n_lock_w_phy1 = (lock1_info & CTRL_LOCK_COARSE_MASK) >> 2; n_lock_r = readl(&phy1_ctrl->phy_con12); n_lock_r &= ~CTRL_DLL_ON; n_lock_r |= n_lock_w_phy1; writel(n_lock_r, &phy1_ctrl->phy_con12); val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4; for (chip = 0; chip < mem->chips_to_configure; chip++) { writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), &drex0->directcmd); writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), &drex1->directcmd); } setbits_le32(&phy0_ctrl->phy_con2, RDLVL_GATE_EN); setbits_le32(&phy1_ctrl->phy_con2, RDLVL_GATE_EN); setbits_le32(&phy0_ctrl->phy_con0, CTRL_SHGATE); setbits_le32(&phy1_ctrl->phy_con0, CTRL_SHGATE); val = readl(&phy0_ctrl->phy_con1); val &= ~(CTRL_GATEDURADJ_MASK); writel(val, &phy0_ctrl->phy_con1); val = readl(&phy1_ctrl->phy_con1); val &= ~(CTRL_GATEDURADJ_MASK); writel(val, &phy1_ctrl->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config); i = TIMEOUT_US; while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) != RDLVL_COMPLETE_CHO) && (i > 0)) { /* * TODO(waihong): Comment on how long this take to * timeout */ sdelay(100); i--; } if (!i) return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config); writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config); i = TIMEOUT_US; while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) != RDLVL_COMPLETE_CHO) && (i > 0)) { /* * TODO(waihong): Comment on how long this take to * timeout */ sdelay(100); i--; } if (!i) return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; writel(CTRL_RDLVL_GATE_DISABLE, &drex1->rdlvl_config); writel(0, &phy0_ctrl->phy_con14); writel(0, &phy1_ctrl->phy_con14); val = (0x3 << DIRECT_CMD_BANK_SHIFT); for (chip = 0; chip < mem->chips_to_configure; chip++) { writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), &drex0->directcmd); writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), &drex1->directcmd); } /* Common Settings for Leveling */ val = PHY_CON12_RESET_VAL; writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12); writel((val + n_lock_w_phy1), &phy1_ctrl->phy_con12); setbits_le32(&phy0_ctrl->phy_con2, DLL_DESKEW_EN); setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN); } /* * Do software read leveling * * Do this before we turn on auto refresh since the auto refresh can * be in conflict with the resync operation that's part of setting * read leveling. */ if (!reset) { /* restore calibrated value after resume */ dmc_set_read_offset_value(phy0_ctrl, readl(&pmu->pmu_spare1)); dmc_set_read_offset_value(phy1_ctrl, readl(&pmu->pmu_spare2)); } else { software_find_read_offset(phy0_ctrl, 0, CTRL_LOCK_COARSE(lock0_info)); software_find_read_offset(phy1_ctrl, 1, CTRL_LOCK_COARSE(lock1_info)); /* save calibrated value to restore after resume */ writel(dmc_get_read_offset_value(phy0_ctrl), &pmu->pmu_spare1); writel(dmc_get_read_offset_value(phy1_ctrl), &pmu->pmu_spare2); } /* Send PALL command */ dmc_config_prech(mem, &drex0->directcmd); dmc_config_prech(mem, &drex1->directcmd); writel(mem->memcontrol, &drex0->memcontrol); writel(mem->memcontrol, &drex1->memcontrol); /* * Set DMC Concontrol: Enable auto-refresh counter, provide * read data fetch cycles and enable DREX auto set powerdown * for input buffer of I/O in none read memory state. */ writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)| DMC_CONCONTROL_IO_PD_CON(0x2), &drex0->concontrol); writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)| DMC_CONCONTROL_IO_PD_CON(0x2), &drex1->concontrol); /* * Enable Clock Gating Control for DMC * this saves around 25 mw dmc power as compared to the power * consumption without these bits enabled */ setbits_le32(&drex0->cgcontrol, DMC_INTERNAL_CG); setbits_le32(&drex1->cgcontrol, DMC_INTERNAL_CG); /* * As per Exynos5800 UM ver 0.00 section 17.13.2.1 * CONCONTROL register bit 3 [update_mode], Exynos5800 does not * support the PHY initiated update. And it is recommended to set * this field to 1'b1 during initialization * * When we apply PHY-initiated mode, DLL lock value is determined * once at DMC init time and not updated later when we change the MIF * voltage based on ASV group in kernel. Applying MC-initiated mode * makes sure that DLL tracing is ON so that silicon is able to * compensate the voltage variation. */ val = readl(&drex0->concontrol); val |= CONCONTROL_UPDATE_MODE; writel(val , &drex0->concontrol); val = readl(&drex1->concontrol); val |= CONCONTROL_UPDATE_MODE; writel(val , &drex1->concontrol); return 0; } #endif